IPP110N20NAXK datasheet

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О ДАТАШИТЕ

• Маркировка
  IPP110N20NAXK
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP110N20NAXK Configuration: Single Continuous Drain Current: 88 A Drain-source Breakdown Voltage: 200 V Fall Time: 11 ns Gate Charge Qg: 65 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: PG-TO220-3 Part # Aliases: IPP110N20NA IPP110N20NAAKSA1 Power Dissipation: 300 W Resistance Drain-source Rds (on): 10.7 mOhms at 10 V Rise Time: 26 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 41 ns RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 10.7 mOhms at 10 V Typical Turn-Off Delay Time: 41 ns
• Количество страниц
  12 шт.
• Форматы файла
  HTML, PDF

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